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RCHIVE INFORMATION
MRF21085LR3 MRF21085LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
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Typical 2--Carrier W--CDMA Performance: VDD
=28Volts,IDQ
= 1000 mA,
Pout
= 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 13.6 dB
Drain Efficiency ? 23%
IM3 @ 10 MHz Offset ? --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset ? --41 dBc in 3.84 MHz Channel Bandwidth
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Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
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Internally Matched for Ease of Use
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High Gain, High Efficiency and High Linearity
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Integrated ESD Protection
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Designed for Maximum Gain and Insertion Phase Flatness
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Excellent Thermal Stability
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Characterized with Series Equivalent Large--Signal Impedance Parameters
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Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″
Nominal.
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
224
1.28
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.78
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF21085
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF21085LR3
MRF21085LSR3
2110--2170 MHz, 90 W, 28 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF21085LR3
CASE 465A--06, STYLE 1
NI--780S
MRF21085LSR3
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Freescale Semiconductor, Inc., 2006, 2010.
All rights reserved.
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